Properties of Silicon Dioxide Film Deposited By PECVD at Low Temperature/Pressure
conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with silane (SiH4) and nitrous oxide (N2O) as precursor gases. The ellipsometer and stress measurement system were used to test the thickness and refractive index uniformity of the SiO2 film fabricated. The ef...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Association of Metallurgical Engineers of Serbia
2014-07-01
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| Series: | Metallurgical & Materials Engineering |
| Subjects: | |
| Online Access: | http://metall-mater-eng.com/index.php/home/article/view/159 |