Carrier lifetime enhancement in halide perovskite via remote epitaxy

Carrier lifetime enhancement in halide perovskite via remote epitaxy

Crystallographic dislocation has proven harmful to the carrier dynamics in conventional semiconductors but it is unexplored in metal halide perovskites. Here Jiang et al. grow remote epitaxial perovskite films on graphene with density-controlled dislocations and confirm their negative impact.

Bibliographic Details
Main Authors: Jie Jiang, Xin Sun, Xinchun Chen, Baiwei Wang, Zhizhong Chen, Yang Hu, Yuwei Guo, Lifu Zhang, Yuan Ma, Lei Gao, Fengshan Zheng, Lei Jin, Min Chen, Zhiwei Ma, Yuanyuan Zhou, Nitin P. Padture, Kory Beach, Humberto Terrones, Yunfeng Shi, Daniel Gall, Toh-Ming Lu, Esther Wertz, Jing Feng, Jian Shi
Format: Article
Language:English
Published: Nature Publishing Group 2019-09-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-12056-1

Internet

https://doi.org/10.1038/s41467-019-12056-1

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