Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated. In this study, a Zr metal as a gate contact to p-GaN/AlGaN/GaN high mobility transistor...

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Bibliographic Details
Main Authors: Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Crystals
Subjects:
normally-off
hemt
p-gan gate
low work function
leakage current
breakdown voltage
Online Access:https://www.mdpi.com/2073-4352/10/1/25

Internet

https://www.mdpi.com/2073-4352/10/1/25

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