Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

It has been known that negative feedback loops (internal and external) in a SiGe heterojunction bipolar transistors (HBT) DC current mirrors improve single-event transient (SET) response; both the peak transient current and the settling time significantly decrease. In the present work, we demonstrat...

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Bibliographic Details
Main Authors: Md Arifur R. Sarker, Seungwoo Jung, Adrian Ildefonso, Ani Khachatrian, Stephen P. Buchner, Dale McMorrow, Pauline Paki, John D. Cressler, Ickhyun Song
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Sensors
Subjects:
current-mode logic (CML)
heterojunction bipolar transistor (HBT)
negative feedback
radiation hardening by design (RHBD)
single-event effects (SEE)
single-event transients (SET)
Online Access:https://www.mdpi.com/1424-8220/20/9/2581

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https://www.mdpi.com/1424-8220/20/9/2581

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