On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are associated with temperature dependent dynamic RON transients analysis to identify the parasitic trapping lo...

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Bibliographic Details
Main Authors: Thomas Lorin, William Vandendaele, Romain Gwoziecki, Yannick Baines, Jerome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, G. Ghibaudo, F. Gaillard
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Power semiconductor devices
gallium nitride
AlGaN/GaN
Schottky diodes
dynamic ron
field plates
Online Access:https://ieeexplore.ieee.org/document/8371232/

Internet

https://ieeexplore.ieee.org/document/8371232/

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