High-Brightness Vertical GaN-Based Light-Emitting Diodes With Hexagonally Close-Packed Micrometer Array Structures
A high-brightness GaN-based vertical light-emitting diode (VLED) was demonstrated by introducing a large-area low-cost direct printing process. A hexagonally close-packed micrometer convex array was fabricated on the n-GaN top layer of the VLED by direct printing using a hydrogen silsesquioxane solu...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6678212/ |