A Thermal Failure Model for MOSFETs Under Repetitive Electromagnetic Pulses

A thermal failure model for MOSFETs under repetitive electromagnetic pulses is investigated in this paper. The analytic equation to analyze the relationship between the temperature rise and pulse parameters is given by a theoretical derivation. The electro-thermal process of a 180 nm MOSFET is simul...

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Bibliographic Details
Main Authors: Yong Li, Haiyan Xie, Hui Yan, Jianguo Wang, Zhiqiang Yang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9296735/