Temperature Droop Characteristics of Internal Efficiency in <inline-formula> <tex-math notation="TeX">$\hbox{In}_{x}\hbox{Ga}_{1-x}\hbox{N/GaN}$</tex-math></inline-formula> Quantum Well Light-Emitting Diodes
The temperature droop characteristics of internal efficiency (IE) in InGaN/GaN quantum well (QW) structures were investigated using the multiband effective mass theory. In the case of a relatively small Auger recombination (<; C<sub>A</sub> = 5 × 10<sup>-30</su...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Photonics Journal |
| Online Access: | https://ieeexplore.ieee.org/document/6899759/ |