A 2 kW S-band RF source for multipactor research utilizing GaN HEMTs
A high power, pulsed RF source designated for use in multipactor research is described. Four gallium nitride high electron mobility transistors from Cree/Wolfspeed, capable of 700 W in long pulse mode (500 W rated output), are combined to achieve a maximum rated output of 2.8 kW with a pulse length...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0009836 |