Improvement of Charge Injection Using Ferroelectric Si:HfO<sub>2</sub> As Blocking Layer in MONOS Charge Trapping Memory
Metal/ferroelectric-Si:HfO<sub>2</sub>/SiN/SiO<sub>2</sub>/Si structure was fabricated to investigate the charge trapping properties. This device enhances the carrier injection into the nitride from the silicon due to the spontaneous polarization in SiO<sub>2</sub>...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8226742/ |