HfO2/TiO2/HfO2 tri-layer high-K gate oxide based MoS2 negative capacitance FET with steep subthreshold swing
Two-dimensional (2D) materials have gained huge attention due to their ultimate thinness that can help dominate the short channel effect caused by transistor miniaturization. Molybdenum disulphide (MoS2) is one of the most promising 2D materials that has an extremely thin body, facilitates aggressiv...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5143939 |