Selective Growth and Contact Gap-Fill of Low Resistivity Si via Microwave Plasma-Enhanced CVD
Low resistivity polycrystalline Si could be selectively grown in the deep (~200 nm) and narrow patterns (~20 nm) of 20 nm pitch design rule DRAM (Dynamic Random Access Memory) by microwave plasma-enhanced chemical vapor deposition (MW-CVD). We were able to achieve the high phosphorus (CVD gap-fill i...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-10-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/10/10/689 |