Notice of Violation of IEEE Publication Principles: Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
Cross point RRAM arrays is the emerging area for future memory devices due to their high density, excellent scalability. Sneak path problem is the main disadvantage of cross point structures which needed to be overcome to produce real devices. Various self-rectifying cells like complementary resisti...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/7533459/ |