Characterization of Heavy Ion Induced SET Features in 22-nm FD-SOI Testing Circuits

Characterization of Heavy Ion Induced SET Features in 22-nm FD-SOI Testing Circuits

With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created by an additional BOX layer. In this work, sev...

Full description

Bibliographic Details
Main Authors: Chang Cai, Ze He, Tianqi Liu, Gengsheng Chen, Jian Yu, Liewei Xu, Jie Liu
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Fully-depleted silicon-on-insulator (FD-SOI)
heavy ions
inverter
single event transient
Online Access:https://ieeexplore.ieee.org/document/9023967/

Internet

https://ieeexplore.ieee.org/document/9023967/

Similar Items