Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review)
In this work, comparative characteristics of thin oxide films (OF) of titanium, erbium, and dysprosium formed on silicon carbide substrates in the presence and absence of a porous silicon carbide (por-SiC) layer have been considered. It has been shown that regardless of the presence of a porous buff...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2020-09-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n3_2020/P253-259abstr.html |