Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-inf...

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Bibliographic Details
Main Authors: Justinas Glemža, Vilius Palenskis, Andrejus Geižutis, Bronislovas Čechavičius, Renata Butkutė, Sandra Pralgauskaitė, Jonas Matukas
Format: Article
Language:English
Published: MDPI AG 2019-02-01
Series:Materials
Subjects:
current-voltage characteristics
defects
electrical noise
fluctuations
GaAsBi laser diode
leakage channel
Online Access:https://www.mdpi.com/1996-1944/12/4/673

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https://www.mdpi.com/1996-1944/12/4/673

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