Two-Layer Microstructures Fabricated by One-Step Anisotropic Wet Etching of Si in KOH Solution

Anisotropic etching of silicon in potassium hydroxide (KOH) is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this residue as a second masking layer to fabricate two-l...

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Bibliographic Details
Main Authors: Han Lu, Hua Zhang, Mingliang Jin, Tao He, Guofu Zhou, Lingling Shui
Format: Article
Language:English
Published: MDPI AG 2016-01-01
Series:Micromachines
Subjects:
Si
Online Access:http://www.mdpi.com/2072-666X/7/2/19