3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits

In this paper, influence of a V-pit embedded inside the multiple quantum wells (MQWs) LED was studied. A fully three-dimensional stress-strain solver and Poisson-drift-diffusion solver are employed to study the current path, where the quantum efficiency and turn-on voltage will be discussed. Our res...

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Bibliographic Details
Main Authors: Chi-Kang Li, Chen-Kuo Wu, Chung-Cheng Hsu, Li-Shuo Lu, Heng Li, Tien-Chang Lu, Yuh-Renn Wu
Format: Article
Published: AIP Publishing LLC 2016-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4950771