Enhancement Mode Flexible SnO<sub>2</sub> Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach

Enhancement Mode Flexible SnO<sub>2</sub> Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach

The effect of ultraviolet/Ozone (UV/O<sub>3</sub>)-assisted annealing process on the structural, chemical, and electrical properties of sol-gel-processed SnO<sub>2</sub> films is investigated in this study. Via the UV/O<sub>3</sub>-assisted annealing processes, mi...

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Bibliographic Details
Main Authors: Bongho Jang, Hongki Kang, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Hyuk-Jun Kwon, Jaewon Jang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Sol-gel
SnO₂
UV/Ozone
thin film transistors
enhancement mode
Online Access:https://ieeexplore.ieee.org/document/9133371/

Internet

https://ieeexplore.ieee.org/document/9133371/

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