Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates
Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against...
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Format: | Article |
Language: | English |
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IEEE
2019-01-01
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Series: | IEEE Access |
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Online Access: | https://ieeexplore.ieee.org/document/8731982/ |