Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates

Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates

Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against...

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Main Author: Bahman Hekmatshoar
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
1/f noise
heterojunctions
silicon devices
stability
thin film transistors
Online Access:https://ieeexplore.ieee.org/document/8731982/
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spelling doaj-9c0ad5f6423443a991f030a1bada13e32021-03-29T23:02:49ZengIEEEIEEE Access2169-35362019-01-017770637706910.1109/ACCESS.2019.29212338731982Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si SubstratesBahman Hekmatshoar0https://orcid.org/0000-0002-4529-2620IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USAElectrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against conventional thin-film transistors (TFTs). Despite the low growth temperature of a-Si:H and c-Si:H (~200°C), HJFETs are found to have higher stability and lower flicker noise than conventional TFTs. These results may be attributed partly to the device structure and partly to the high-quality gate heterojunction of the HJFETs.https://ieeexplore.ieee.org/document/8731982/1/f noiseheterojunctionssilicon devicesstabilitythin film transistors
collection DOAJ
language English
format Article
sources DOAJ
author Bahman Hekmatshoar
spellingShingle Bahman Hekmatshoar
Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates
IEEE Access
1/f noise
heterojunctions
silicon devices
stability
thin film transistors
author_facet Bahman Hekmatshoar
author_sort Bahman Hekmatshoar
title Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates
title_short Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates
title_full Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates
title_fullStr Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates
title_full_unstemmed Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates
title_sort electrical stability and flicker noise of thin-film heterojunction fets on poly-si substrates
publisher IEEE
series IEEE Access
issn 2169-3536
publishDate 2019-01-01
description Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against conventional thin-film transistors (TFTs). Despite the low growth temperature of a-Si:H and c-Si:H (~200°C), HJFETs are found to have higher stability and lower flicker noise than conventional TFTs. These results may be attributed partly to the device structure and partly to the high-quality gate heterojunction of the HJFETs.
topic 1/f noise
heterojunctions
silicon devices
stability
thin film transistors
url https://ieeexplore.ieee.org/document/8731982/
work_keys_str_mv AT bahmanhekmatshoar electricalstabilityandflickernoiseofthinfilmheterojunctionfetsonpolysisubstrates
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