Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates
Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against...
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doaj-9c0ad5f6423443a991f030a1bada13e32021-03-29T23:02:49ZengIEEEIEEE Access2169-35362019-01-017770637706910.1109/ACCESS.2019.29212338731982Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si SubstratesBahman Hekmatshoar0https://orcid.org/0000-0002-4529-2620IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USAElectrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against conventional thin-film transistors (TFTs). Despite the low growth temperature of a-Si:H and c-Si:H (~200°C), HJFETs are found to have higher stability and lower flicker noise than conventional TFTs. These results may be attributed partly to the device structure and partly to the high-quality gate heterojunction of the HJFETs.https://ieeexplore.ieee.org/document/8731982/1/f noiseheterojunctionssilicon devicesstabilitythin film transistors |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Bahman Hekmatshoar |
spellingShingle |
Bahman Hekmatshoar Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates IEEE Access 1/f noise heterojunctions silicon devices stability thin film transistors |
author_facet |
Bahman Hekmatshoar |
author_sort |
Bahman Hekmatshoar |
title |
Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates |
title_short |
Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates |
title_full |
Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates |
title_fullStr |
Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates |
title_full_unstemmed |
Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates |
title_sort |
electrical stability and flicker noise of thin-film heterojunction fets on poly-si substrates |
publisher |
IEEE |
series |
IEEE Access |
issn |
2169-3536 |
publishDate |
2019-01-01 |
description |
Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against conventional thin-film transistors (TFTs). Despite the low growth temperature of a-Si:H and c-Si:H (~200°C), HJFETs are found to have higher stability and lower flicker noise than conventional TFTs. These results may be attributed partly to the device structure and partly to the high-quality gate heterojunction of the HJFETs. |
topic |
1/f noise heterojunctions silicon devices stability thin film transistors |
url |
https://ieeexplore.ieee.org/document/8731982/ |
work_keys_str_mv |
AT bahmanhekmatshoar electricalstabilityandflickernoiseofthinfilmheterojunctionfetsonpolysisubstrates |
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1724190237863706624 |