Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates

Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates

Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate and hydrogenated crystalline Si (c-Si:H) source and drain regions on small-grain poly-Si substrates are investigated and benchmarked against...

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Bibliographic Details
Main Author: Bahman Hekmatshoar
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
1/f noise
heterojunctions
silicon devices
stability
thin film transistors
Online Access:https://ieeexplore.ieee.org/document/8731982/

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