Ultraviolet photosensors based on ZnS thin films
High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnS)х(CdSe)1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region.
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2009-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2009/5_2009/pdf/08.zip |