Electron glass effects in amorphous NbSi films
We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
SciPost
2020-04-01
|
| Series: | SciPost Physics |
| Online Access: | https://scipost.org/SciPostPhys.8.4.056 |