Impact of negative and positive bias temperature stress on 6T-SRAM cells
With introduction of high-k gate oxide materials, the degradation effect <i>Positive Bias Temperature Instability</i> (PBTI) is starting to play an important role. Together with the still effective <i>Negative Bias Temperature Instability</i> (...
| Main Authors: | , , |
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| Format: | Article |
| Language: | deu |
| Published: |
Copernicus Publications
2009-05-01
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| Series: | Advances in Radio Science |
| Online Access: | http://www.adv-radio-sci.net/7/191/2009/ars-7-191-2009.pdf |