Physical origins of current and temperature controlled negative differential resistances in NbO2
The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.
Main Authors: | , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2017-09-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-017-00773-4 |