Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

We study the effect of thermal annealing on the electrical properties of the nanoscale <i>p</i>-<i>n</i> heterojunctions based on single <i>n</i>-type ZnO nanorods on <i>p</i>-type GaN substrates. The ZnO nanorods are prepared by chemical bath depositi...

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Bibliographic Details
Main Authors: Stanislav Tiagulskyi, Roman Yatskiv, Hana Faitová, Šárka Kučerová, David Roesel, Jan Vaniš, Jan Grym, Jozef Veselý
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Nanomaterials
Subjects:
zno nanorods
nanoscale heterojunctions
current-voltage characteristics
chemical bath deposition
annealing
focused ion beam patterning
nanoprobe in the scanning electron microscope
Online Access:https://www.mdpi.com/2079-4991/10/3/508

Internet

https://www.mdpi.com/2079-4991/10/3/508

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