Resistivity reduction of low temperature grown p-Al0.09Ga0.91N by suppressing the incorporation of carbon impurity
Reducing the resistivity of low temperature grown p-Al0.09Ga0.91N layers is crucial to improving the performance of GaN-based laser diodes. In this study, growth conditions of low temperature grown p-Al0.09Ga0.91N layers are monitored and the role of C impurity is investigated systematically. On the...
Main Authors: | F. Liang, Jing Yang, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, P. Chen, S. T. Liu, Y. Xing, L. Q. Zhang, W. J. Wang, Mo Li, Y. T. Zhang, G. T. Du |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-08-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5046875 |
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