Highly-Efficient and Compact 6 kW/4 × 125 kHz Interleaved DC-DC Boost Converter with SiC Devices and Low-Capacitive Inductors
This paper describes a four-leg interleaved DC-DC boost converter built on the basis of Silicon Carbide (SiC) devices (Metal-Oxide Semiconductor Field-Effect Transistors—MOSFETs and Schottky diodes) and improved, low-capacitive magnetic components. A combination of wide-bandgap semiconductors capabl...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-03-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1073/10/3/363 |