Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

<p>Abstract</p> <p>We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 &#176;C....

Full description

Bibliographic Details
Main Authors: Bouravleuv AD, Soshnikov IP, Dubrovskii VG, Werner P, Arakcheeva EM, Tanklevskaya EM, Cirlin GE, Samsonenko Yu
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
Molecular beam epitaxy
Nanowires
GaAs
Solar cells
Photovoltaic properties
Online Access:http://dx.doi.org/10.1007/s11671-009-9488-2

Internet

http://dx.doi.org/10.1007/s11671-009-9488-2

Similar Items