Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, a...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5086796 |