Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN

Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN

The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, a...

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Main Authors: Ievgen Boturchuk, Leopold Scheffler, Arne Nylandsted Larsen, Brian Julsgaard
Format: Article
Language:English
Published: AIP Publishing LLC 2019-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5086796
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spelling doaj-9f60c7a6f8de48fa82ba7833b0fd25ef2020-11-24T21:51:13ZengAIP Publishing LLCAIP Advances2158-32262019-02-0192025322025322-610.1063/1.5086796108902ADVAnomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaNIevgen Boturchuk0Leopold Scheffler1Arne Nylandsted Larsen2Brian Julsgaard3iNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkDepartment of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C, DenmarkiNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkiNANO, Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C, DenmarkThe present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, and a frequency factor of 106±1 s−1. Depth profiles suggest that the charge state of the defects determines the observed amplitude variation. Relevant models for the observed behavior, and their shortcomings are discussed: (i) passivating properties of hydrogen, and (ii) bistable defect component(s). A proper explanation of the experimental observations represents, however, a further challenge.http://dx.doi.org/10.1063/1.5086796
collection DOAJ
language English
format Article
sources DOAJ
author Ievgen Boturchuk
Leopold Scheffler
Arne Nylandsted Larsen
Brian Julsgaard
spellingShingle Ievgen Boturchuk
Leopold Scheffler
Arne Nylandsted Larsen
Brian Julsgaard
Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
AIP Advances
author_facet Ievgen Boturchuk
Leopold Scheffler
Arne Nylandsted Larsen
Brian Julsgaard
author_sort Ievgen Boturchuk
title Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
title_short Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
title_full Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
title_fullStr Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
title_full_unstemmed Anomalous behavior of electrically active defects near EC−0.5 eV in MOCVD, as-grown GaN
title_sort anomalous behavior of electrically active defects near ec−0.5 ev in mocvd, as-grown gan
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-02-01
description The present work reports on a distinct and very reproducible bistable-like behavior of two defects at around EC − 0.5 eV in MOCVD-grown GaN. The kinetics of the thermally activated transformation between the two states are analyzed in an Arrhenius model, yielding an energy barrier of 0.4 ± 0.1 eV, and a frequency factor of 106±1 s−1. Depth profiles suggest that the charge state of the defects determines the observed amplitude variation. Relevant models for the observed behavior, and their shortcomings are discussed: (i) passivating properties of hydrogen, and (ii) bistable defect component(s). A proper explanation of the experimental observations represents, however, a further challenge.
url http://dx.doi.org/10.1063/1.5086796
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AT leopoldscheffler anomalousbehaviorofelectricallyactivedefectsnearec05evinmocvdasgrowngan
AT arnenylandstedlarsen anomalousbehaviorofelectricallyactivedefectsnearec05evinmocvdasgrowngan
AT brianjulsgaard anomalousbehaviorofelectricallyactivedefectsnearec05evinmocvdasgrowngan
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