Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition

Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth te...

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Bibliographic Details
Main Authors: Heli Seppänen, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, Harri Lipsanen
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Materials
Subjects:
AlN
ALA
ALD
buffer layers
transition layer
MOCVD
regrowth
Online Access:https://www.mdpi.com/1996-1944/12/3/406

Internet

https://www.mdpi.com/1996-1944/12/3/406

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