Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth te...
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MDPI AG
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/12/3/406 |
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doaj-9f7ff8b1867a41bea1c1c5f4f6e8b5312020-11-25T00:31:05ZengMDPI AGMaterials1996-19442019-01-0112340610.3390/ma12030406ma12030406Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer DepositionHeli Seppänen0Iurii Kim1Jarkko Etula2Evgeniy Ubyivovk3Alexei Bouravleuv4Harri Lipsanen5Department of Electronics and Nanoengineering, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, FinlandDepartment of Electronics and Nanoengineering, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, FinlandDepartment of Chemistry and Materials Science, Aalto University School of Chemical Engineering, P.O. Box 16100, FI-00076 Aalto, FinlandITMO University, Kronverksky pr. 49, 197101 Saint Petersburg, RussiaDepartment of Electronics and Nanoengineering, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, FinlandDepartment of Electronics and Nanoengineering, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto, FinlandAluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.https://www.mdpi.com/1996-1944/12/3/406AlNALAALDbuffer layerstransition layerMOCVDregrowth |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Heli Seppänen Iurii Kim Jarkko Etula Evgeniy Ubyivovk Alexei Bouravleuv Harri Lipsanen |
| spellingShingle |
Heli Seppänen Iurii Kim Jarkko Etula Evgeniy Ubyivovk Alexei Bouravleuv Harri Lipsanen Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition Materials AlN ALA ALD buffer layers transition layer MOCVD regrowth |
| author_facet |
Heli Seppänen Iurii Kim Jarkko Etula Evgeniy Ubyivovk Alexei Bouravleuv Harri Lipsanen |
| author_sort |
Heli Seppänen |
| title |
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| title_short |
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| title_full |
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| title_fullStr |
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| title_full_unstemmed |
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| title_sort |
aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition |
| publisher |
MDPI AG |
| series |
Materials |
| issn |
1996-1944 |
| publishDate |
2019-01-01 |
| description |
Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si<100> and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds. |
| topic |
AlN ALA ALD buffer layers transition layer MOCVD regrowth |
| url |
https://www.mdpi.com/1996-1944/12/3/406 |
| work_keys_str_mv |
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