Multifractal characterization of epitaxial silicon carbide on silicon
The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multif...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sciendo
2017-10-01
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| Series: | Materials Science-Poland |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/msp-2017-0049 |