Amorphized length and variability in phase-change memory line cells

Amorphized length and variability in phase-change memory line cells

The dimensions of amorphized regions in phase-change memory cells are critical parameters to design devices for different applications. However, these dimensions are difficult to be determined by direct imaging. In this work, the length of amorphized regions in multiple identical Ge2Sb2Te5 (GST) lin...

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Bibliographic Details
Main Authors: Nafisa Noor, Sadid Muneer, Raihan Sayeed Khan, Anna Gorbenko, Helena Silva
Format: Article
Language:English
Published: Beilstein-Institut 2020-10-01
Series:Beilstein Journal of Nanotechnology
Subjects:
amorphous materials
drift
electrical breakdown
electrical resistivity
phase-change memory
pulse measurement
stochastic processes
threshold switching
Online Access:https://doi.org/10.3762/bjnano.11.147

Internet

https://doi.org/10.3762/bjnano.11.147

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