Reliable 2D Phase Transitions for Low-Noise and Long-Life Memory Programming

Extending cycling endurance and suppressing programming noise of phase-change random-access memory (PCRAM) are the key challenges with respect to the development of nonvolatile working memory and high-accuracy neuromorphic computing devices. However, the large-scale atomic migration along electrical...

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Bibliographic Details
Main Authors: Keyuan Ding, Tianci Li, Bin Chen, Feng Rao
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-03-01
Series:Frontiers in Nanotechnology
Subjects:
Online Access:https://www.frontiersin.org/articles/10.3389/fnano.2021.649560/full