Ultrasmooth ultrathin Ag films by AlN seeding and Ar/N2 sputtering for transparent conductive and heating applications

We report on the fabrication of 15-nm Ag films with 0.6 nm RMS roughness and only 3 times the bulk electrical resistivity using a transparent AlN seed layer and Ar/N2 (60% N2) based sputtering of Ag. Either AlN-seeding or Ar/N2 sputtering alone reduces the percolation threshold of Ag thin films and...

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Bibliographic Details
Main Authors: Remy H. H. Ko, Ali Khalatpour, J. Kenji D. Clark, Nazir P. Kherani
Format: Article
Language:English
Published: AIP Publishing LLC 2018-12-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5052261