In-line Si1-xGex epitaxial process monitoring and diagnostics using multiwavelength high resolution micro-Raman spectroscopy

In-line Si1-xGex epitaxial process monitoring and diagnostics using multiwavelength high resolution micro-Raman spectroscopy

Multiwavelength, high resolution micro-Raman spectroscopy was applied to in-line process monitoring and diagnostics of undoped and B-doped Si1-xGex epitaxy on Si(100) device wafers. This noncontact technique was used to monitor the Ge content, B concentration and thickness of single and double Si1-x...

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Bibliographic Details
Main Authors: Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shen-Min Yang, Ming-Shan Tsai, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Format: Article
Language:English
Published: AIP Publishing LLC 2012-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4711043

Internet

http://dx.doi.org/10.1063/1.4711043

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