Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

We report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI...

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Bibliographic Details
Main Authors: Md Mehedi Hasan, Mohammad Masum Billah, Xiuling Li, Jin Jang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8733897/