Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics

We report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI...

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Bibliographic Details
Main Authors: Md Mehedi Hasan, Mohammad Masum Billah, Xiuling Li, Jin Jang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs
buried layer
stretching
tensile bending
PI substrate
TCAD
Online Access:https://ieeexplore.ieee.org/document/8733897/

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https://ieeexplore.ieee.org/document/8733897/

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