Distribution of free carriers near heavily-doped epitaxial surfaces of n-type Ge(100) upon HF and HCl treatments
Carrier distributions near n-type epitaxially-grown Ge(100) surfaces with high impurity concentrations (1 × 1020 cm−3) were studied using high resolution electron energy loss spectroscopy (HREELS) upon surface treatments in aqueous solutions of HF and HCl. After surface treatments with HCl and HF, t...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4934673 |