All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C...

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Bibliographic Details
Main Authors: Jianqiu Chen, Xiuqi Huang, Qunjie Li, Zhiqiang Fang, Honglong Ning, Ruiqiang Tao, Hongfu Liang, Yicong Zhou, Rihui Yao, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Applied Sciences
Subjects:
thin film transistors
stability
top-gate
Nd-IZO
Online Access:http://www.mdpi.com/2076-3417/9/1/83

Internet

http://www.mdpi.com/2076-3417/9/1/83

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