Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. The rectifying dr...

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Bibliographic Details
Main Authors: Tae-Hyeon Kim, Won-Ho Jang, Jun-Hyeok Yim, Ho-Young Cha
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
AlGaN/GaN heterojunction
p-GaN gate
unidirectional operation
rectifying electrode
Online Access:https://www.mdpi.com/2072-666X/12/3/291

Internet

https://www.mdpi.com/2072-666X/12/3/291

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