Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED

Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED

Designing a high-quality switch block ensures the efficient data transmission in digital circuits and systems. In this paper, an innovative 2:1 multiplexer is successfully designed based on the previously proposed side-contacted field-effect diodes (S-FEDs) at 180 nm SOI technology node. Optimizatio...

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Bibliographic Details
Main Authors: Tara Ghafouri, Negin Manavizadeh
Format: Article
Language:English
Published: Elsevier 2021-03-01
Series:Ain Shams Engineering Journal
Subjects:
Multiplexer design
Side-contacted field-effect diode (S-FED)
Noise margin
Power consumption
Switching frequency
Online Access:http://www.sciencedirect.com/science/article/pii/S209044792030109X

Internet

http://www.sciencedirect.com/science/article/pii/S209044792030109X

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