Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED
Designing a high-quality switch block ensures the efficient data transmission in digital circuits and systems. In this paper, an innovative 2:1 multiplexer is successfully designed based on the previously proposed side-contacted field-effect diodes (S-FEDs) at 180 nm SOI technology node. Optimizatio...
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doaj-a18818f3bd0a44a9aea7a7d7c03bb1482021-06-02T18:33:51ZengElsevierAin Shams Engineering Journal2090-44792021-03-01121709716Design and simulation of high-performance 2:1 multiplexer based on side-contacted FEDTara Ghafouri0Negin Manavizadeh1Faculty of Electrical Engineering, K.N. Toosi University of Technology, Tehran 1631714191, IranCorresponding author.; Faculty of Electrical Engineering, K.N. Toosi University of Technology, Tehran 1631714191, IranDesigning a high-quality switch block ensures the efficient data transmission in digital circuits and systems. In this paper, an innovative 2:1 multiplexer is successfully designed based on the previously proposed side-contacted field-effect diodes (S-FEDs) at 180 nm SOI technology node. Optimization of the reservoir thickness and gate work function of the S-FED satisfy high ION/IOFF ratio and noise-immunity. DC, AC, and transient mixed-mode simulations are employed to scrutinize and compare performance of constituent logic gates based on the S-FED and CMOS. Simulation results demonstrate superior noise margins up to 100 mV for the S-FED-based inverter compared with the CMOS-based counterpart. Furthermore, the S-FED-based transmission gate with switching frequency of 38.9 GHz can act as a high-speed alternative for the CMOS-based one. Both multiplexer architectures configured by the S-FED and CMOS are compared in terms of performance parameters. In this regard, average power consumption and PDP quantities for the S-FED-based multiplexer reveal significant reductions by about 2 and 3 orders of magnitude, respectively, compared with the CMOS-based one. In addition, propagation delay time increases drastically with scaling power supply in the CMOS-based multiplexer; while, this increase is suppressed for the S-FED-based version.http://www.sciencedirect.com/science/article/pii/S209044792030109XMultiplexer designSide-contacted field-effect diode (S-FED)Noise marginPower consumptionSwitching frequency |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tara Ghafouri Negin Manavizadeh |
spellingShingle |
Tara Ghafouri Negin Manavizadeh Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED Ain Shams Engineering Journal Multiplexer design Side-contacted field-effect diode (S-FED) Noise margin Power consumption Switching frequency |
author_facet |
Tara Ghafouri Negin Manavizadeh |
author_sort |
Tara Ghafouri |
title |
Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED |
title_short |
Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED |
title_full |
Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED |
title_fullStr |
Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED |
title_full_unstemmed |
Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED |
title_sort |
design and simulation of high-performance 2:1 multiplexer based on side-contacted fed |
publisher |
Elsevier |
series |
Ain Shams Engineering Journal |
issn |
2090-4479 |
publishDate |
2021-03-01 |
description |
Designing a high-quality switch block ensures the efficient data transmission in digital circuits and systems. In this paper, an innovative 2:1 multiplexer is successfully designed based on the previously proposed side-contacted field-effect diodes (S-FEDs) at 180 nm SOI technology node. Optimization of the reservoir thickness and gate work function of the S-FED satisfy high ION/IOFF ratio and noise-immunity. DC, AC, and transient mixed-mode simulations are employed to scrutinize and compare performance of constituent logic gates based on the S-FED and CMOS. Simulation results demonstrate superior noise margins up to 100 mV for the S-FED-based inverter compared with the CMOS-based counterpart. Furthermore, the S-FED-based transmission gate with switching frequency of 38.9 GHz can act as a high-speed alternative for the CMOS-based one. Both multiplexer architectures configured by the S-FED and CMOS are compared in terms of performance parameters. In this regard, average power consumption and PDP quantities for the S-FED-based multiplexer reveal significant reductions by about 2 and 3 orders of magnitude, respectively, compared with the CMOS-based one. In addition, propagation delay time increases drastically with scaling power supply in the CMOS-based multiplexer; while, this increase is suppressed for the S-FED-based version. |
topic |
Multiplexer design Side-contacted field-effect diode (S-FED) Noise margin Power consumption Switching frequency |
url |
http://www.sciencedirect.com/science/article/pii/S209044792030109X |
work_keys_str_mv |
AT taraghafouri designandsimulationofhighperformance21multiplexerbasedonsidecontactedfed AT neginmanavizadeh designandsimulationofhighperformance21multiplexerbasedonsidecontactedfed |
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