Design and simulation of high-performance 2:1 multiplexer based on side-contacted FED
Designing a high-quality switch block ensures the efficient data transmission in digital circuits and systems. In this paper, an innovative 2:1 multiplexer is successfully designed based on the previously proposed side-contacted field-effect diodes (S-FEDs) at 180 nm SOI technology node. Optimizatio...
Main Authors: | Tara Ghafouri, Negin Manavizadeh |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2021-03-01
|
Series: | Ain Shams Engineering Journal |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S209044792030109X |
Similar Items
-
Performance comparison of 6T SRAM bit-cells based on side-contacted FED and CMOS
by: Tara Ghafouri, et al.
Published: (2020-10-01) -
Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference method
by: Tara Ghafouri, et al.
Published: (2020-12-01) -
A New Differentially-Fed Frequency Reconfigurable Antenna for WLAN and Sub-6GHz 5G Applications
by: Guiping Jin, et al.
Published: (2019-01-01) -
Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies
by: Ahid S. Hajo, et al.
Published: (2020-01-01) -
Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
by: Basanets V. V., et al.
Published: (2015-02-01)