Methodology to Investigate Impact of Grain Orientation on Threshold Voltage and Current Variability in Tunneling Field-Effect Transistors
In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage (V<sub>ON</...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9238013/ |