Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective. The quality of AlN could be improved by eliminatin...

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Bibliographic Details
Main Authors: Tatiana S. Argunova, Mikhail Yu. Gutkin, Jung Ho Je, Alexander E. Kalmykov, Olga P. Kazarova, Evgeniy N. Mokhov, Kristina N. Mikaelyan, Alexander V. Myasoedov, Lev M. Sorokin, Kirill D. Shcherbachev
Format: Article
Language:English
Published: MDPI AG 2017-06-01
Series:Crystals
Subjects:
dislocations
AlN
SiC
X-ray imaging
X-ray scattering
Online Access:http://www.mdpi.com/2073-4352/7/6/163

Internet

http://www.mdpi.com/2073-4352/7/6/163

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