Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates
To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective. The quality of AlN could be improved by eliminatin...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2017-06-01
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Series: | Crystals |
Subjects: | |
Online Access: | http://www.mdpi.com/2073-4352/7/6/163 |