Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations...

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Bibliographic Details
Main Authors: Yutaka Majima, Guillaume Hackenberger, Yasuo Azuma, Shinya Kano, Kosuke Matsuzaki, Tomofumi Susaki, Masanori Sakamoto, Toshiharu Teranishi
Format: Article
Language:English
Published: Taylor & Francis Group 2017-12-01
Series:Science and Technology of Advanced Materials
Subjects:
Single-electron transistor
passivation
aluminum oxide
chemical assembly
logic circuit
nanoparticle
Online Access:http://dx.doi.org/10.1080/14686996.2017.1320190

Internet

http://dx.doi.org/10.1080/14686996.2017.1320190

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