Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room temperature were shown for Ag/Ti/CeO2/Pt devic...

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Bibliographic Details
Main Authors: Wenqing Wang, Baolin Zhang, Hongbin Zhao
Format: Article
Language:English
Published: Elsevier 2020-03-01
Series:Results in Physics
Subjects:
ECM
TCM
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379719334370